论文标题
关于通过电扫描探针显微镜探测的3C-SIC热氧化物的过早分解的起源
On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy
论文作者
论文摘要
研究了在立方硅（3C-SIC）上生长的热氧化物（SIO2）的介电分解（BD），以比较使用导电性应力（C-Afmafm）和Scanning（Scanning）（Scanning）（CMACICACINANCE（SCANNING）（SCANNING）（CMACITANCE）（CMICTANCE）（CMACITANCE（SCANNING），将宏观金属 - 氧化物（MOS）电容器（MOS）电容器的电行为与纳米级电容器进行了比较（MOS）。 C-AFM通过氧化物BD事件的空间解析统计表明，外部过早的BD与3C-SIC层中特殊的扩展缺陷，抗相期边界（APB）相关。 SCM分析显示，在堆叠断层（SFS）的3C-SIC处的载体密度较大，可以通过传导带中局部增强的状态密度来解释。另一方面，推导了APB的局部少数携带者浓度的局部增加，这表明它们的行为是进行缺陷，也有可能捕获正电荷的可能性。结果用局部电场的增强来解释，这是带正电荷缺陷的对应关系。
The dielectric breakdown (BD) of thermal oxide (SiO2) grown on cubic silicon carbide (3C-SiC) was investigated comparing the electrical behavior of macroscopic metal-oxidesemiconductor (MOS) capacitors with nanoscale current and capacitance mapping using conductive atomic force (C-AFM) and scanning capacitance microscopy (SCM). Spatially resolved statistics of the oxide BD events by C-AFM revealed that the extrinsic premature BD is correlated to the presence of peculiar extended defects, the anti-phase boundaries (APBs), in the 3C-SiC layer. SCM analyses showed a larger carrier density at the stacking faults (SFs) the 3C-SiC, that can be explained by a locally enhanced density of states in the conduction band. On the other hand, a local increase of minority carriers concentration was deduced for APBs, indicating that they behave as conducting defects having also the possibility to trap positive charges. The results were explained with the local electric field enhancement in correspondence of positively charged defects.
