论文标题
单载波设备中混合欧姆和空间充电限制传导的分析描述
Analytical Description of Mixed Ohmic and Space-Charge-Limited Conduction in Single-Carrier Devices
论文作者
论文摘要
尽管空间充电限量的电流测量通常用于表征相对固有的，低弹性的半导体中的电荷传输，但目前很难用这种方法表征轻度或重掺杂的半导体。通过结合描述欧姆和太空荷利限制传导的理论，我们得出了一种一般的分析方法，以提取单个载波设备的当前密度 - 电压曲线的电荷载体密度，传导带边缘和漂移成分，当时半导体设备的电压曲线要么是未乘，要么轻轻掺杂，液掺杂或浓度。呈现的模型涵盖了整个电压范围，即低压状态和Mott-Gurney机制。我们证明，在当前密度 - 电压曲线受到显着影响之前，必须考虑到掺杂设备的上限，并且我们证明必须考虑必须考虑将背景电荷载体密度准确地模拟低压状态下的漂移组件，而不管该设备是否掺杂。我们希望本文提出的最终分析表达式对研究新型材料和设备中的电荷传输的实验者直接有用。
While space-charge-limited current measurements are often used to characterize charge-transport in relatively intrinsic, low-mobility semiconductors, it is currently difficult to characterize lightly or heavily doped semiconductors with this method. By combining the theories describing ohmic and space-charge-limited conduction, we derive a general analytical approach to extract the charge-carrier density, the conduction-band edge and the drift components of the current density-voltage curves of a single-carrier device when the semiconductor is either undoped, lightly doped or heavily doped. The presented model covers the entire voltage range, i.e., both the low-voltage regime and the Mott-Gurney regime. We demonstrate that there is an upper limit to how doped a device must be before the current density-voltage curves are significantly affected, and we show that the background charge-carrier density must be considered to accurately model the drift component in the low-voltage regime, regardless of whether the device is doped or not. We expect that the final analytical expressions presented herein to be directly useful to experimentalists studying charge transport in novel materials and devices.
