论文标题
Halperin状态可以产生任何填充分数
Halperin states can produce any filling fractions
论文作者
论文摘要
我们研究了双层分数量子霍尔州，也称为Halperin State。我们证明，对于任何填充分数（正理性数字），有无限的解决方案暗示着无限的拓扑状态与任何给定的填充分数相对应。我们的结果可以适用于任何电荷向量。
We study bilayer Fractional Quantum Hall State also known as Halperin state. We prove that for any filling fractions (positive rational numbers), there are infinite solutions that imply that infinite topological states are corresponding to any given filling fraction. Our results can apply to any charge vectors.
