论文标题

Dirac Gap调制的性质和轴抗铁磁拓扑绝缘子MNBI $ _2 $ TE $ _4 $

Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator MnBi$_2$Te$_4$

论文作者

Shikin, A. M., Estyunin, D. A., Klimovskikh, I. I., Filnov, S. O., Schwier, E. F., Kumar, S., Myamoto, K., Okuda, T., Kimura, A., Kuroda, K., Yaji, K., Shin, S., Takeda, Y., Saitoh, Y., Aliev, Z. S., Mamedov, N. T., Amiraslanov, I. R., Babanly, M. B., Otrokov, M. M., Eremeev, S. V., Chulkov, E. V.

论文摘要

在反铁磁(AFM)轴承拓扑绝缘子MNBI $ _2 $ _2 $ _4 $及其电子和旋转结构中,通过角度和自旋分辨光发射光谱(ARPE)研究了,在激发温度的变化下,通过角度和自旋分辨光光度光谱(ARPE)进行了研究(9-355〜K),磁性(9-355〜K),修改dirac Point(DP)的间隙(DP)的修改。我们在ARPES分散剂中的DP处区分了一个大的(62-67〜MEV)和减少(15-18〜MEV)的间隙,该间隙保持在Néel温度以上($ T_ \ Mathrm {n} = 24.5 $ 〜K)。我们建议,由于手性旋转波动产生的短距离磁场,高于$ t_ \ mathrm {n} $上方的间隙保持开放。自旋分辨的ARPE,XMCD和圆形二色性ARPES测量显示了大间隙样品的表面铁磁有序,并显着降低了减少间隙样品的有效磁矩。由于结构缺陷和机械干扰,这些影响可能与拓扑DC状态向第二MN层的转移有关,在该磁性缺陷和机械干扰受到相反磁矩的补偿效果的影响。

Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation with variation of temperature (9-35~K), light polarization and photon energy. We have distinguished both a large (62-67~meV) and a reduced (15-18~meV) gap at the DP in the ARPES dispersions, which remains open above the Néel temperature ($T_\mathrm{N}=24.5$~K). We propose that the gap above $T_\mathrm{N}$ remains open due to short-range magnetic field generated by chiral spin fluctuations. Spin-resolved ARPES, XMCD and circular dichroism ARPES measurements show a surface ferromagnetic ordering for large-gap sample and significantly reduced effective magnetic moment for the reduced-gap sample. These effects can be associated with a shift of the topological DC state towards the second Mn layer due to structural defects and mechanical disturbance, where it is influenced by a compensated effect of opposite magnetic moments.

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