论文标题
用被困的铍离子处理量子信息处理的VECSEL系统
VECSEL systems for quantum information processing with trapped beryllium ions
论文作者
论文摘要
证明了两个在235 nm和313 nm处产生紫外线（UV）辐射的垂直外腔表面发射激光（VECSEL）系统。该系统适用于用被困的铍离子与量子信息处理应用。每个系统都由一个紧凑的，单频，连续的波vecsel组成，可产生高功率近红外光，可在数十纳米上调整。一个系统使用基于Gainas/gaas量子井的增益镜在940 nm处生成2.4 W，该镜子转换为54 MW的235 nm光，用于中性铍原子的光电离。另一个系统使用基于GainNAS/GAAS量子孔的新型增益镜，从而在GAAS晶格中具有可管理的应变，从而使波长延伸。该系统在1252 nm处生成1.6 W，将其转换为41 MW的313 nm灯，用于激光凉爽的$^{9} $ be $^{+} $ ions并实现量子状态准备和检测。 313 nm系统也适用于实施高保真量子门，更广泛地，我们的结果扩展了VECSEL系统在原子，分子和光学物理中应用的功能。
Two vertical-external-cavity surface-emitting laser (VECSEL) systems producing ultraviolet (UV) radiation at 235 nm and 313 nm are demonstrated. The systems are suitable for quantum information processing applications with trapped beryllium ions. Each system consists of a compact, single-frequency, continuous-wave VECSEL producing high-power near-infrared light, tunable over tens of nanometers. One system generates 2.4 W at 940 nm, using a gain mirror based on GaInAs/GaAs quantum wells, which is converted to 54 mW of 235 nm light for photoionization of neutral beryllium atoms. The other system uses a novel gain mirror based on GaInNAs/GaAs quantum-wells, enabling wavelength extension with manageable strain in the GaAs lattice. This system generates 1.6 W at 1252 nm, which is converted to 41 mW of 313 nm light that is used to laser cool trapped $^{9}$Be$^{+}$ ions and to implement quantum state preparation and detection. The 313 nm system is also suitable for implementing high-fidelity quantum gates, and more broadly, our results extend the capabilities of VECSEL systems for applications in atomic, molecular, and optical physics.
