论文标题
超导QUBITS和GAP状态连续体中的磁通量噪声
Magnetic flux noise in superconducting qubits and the gap states continuum
论文作者
论文摘要
在本研究中，我们研究了无序的金属 - 绝缘子界面上金属诱导的间隙状态（MIGSS）所选的局部方面，这些界面先前提出会产生某些超导二极管模态中磁通量噪声的磁矩。我们的分析试图补充可用的研究并为其验证提供新的理论贡献。特别是，我们明确地讨论了MIGS在动量空间中的行为，这是局部现场能量偏差的函数，即模仿界面处的随机潜在障碍。可以发现，当绝缘子中的特征电子电位之间的差异增加时，相应的MIGS会变得更加局部。这种作用与潜在疾病的增加有关，该程度早些时候观察到在超导Qubits中产生高度局部的MIGS。同时，提出的发现表明，米格斯的疾病诱导的定位可以直接与这些状态的衰减特性以及绝缘体的批量电子特性有关。结果，我们的研究增强了先前对通量噪声起源的相应研究的合理性，但也允许将来向未来的方向提出更好的验证方向。
In the present study we investigate the selected local aspects of the metal-induced gap states (MIGSs) at the disordered metal-insulator interface, that were previously proposed to produce magnetic moments responsible for the magnetic flux noise in some of the superconducting qubit modalities. Our analysis attempts to supplement the available studies and provide new theoretical contribution toward their validation. In particular, we explicitly discuss the behavior of the MIGSs in the momentum space as a function of the local onsite energy deviation, that mimics random potential disorder at the interface. It is found, that when the difference between the characteristic electronic potentials in the insulator increases, the corresponding MIGSs become more localized. This effect is associated with the increasing degree of the potential disorder that was earlier observed to produce highly localized MIGSs in the superconducting qubits. At the same time, the presented findings show that the disorder-induced localization of the MIGSs can be related directly to the decay characteristics of these states as well as to the bulk electronic properties of the insulator. As a result, our study reinforces plausibility of the previous corresponding investigations on the origin of the flux noise, but also allows to draw future directions toward their better verification.
