论文标题
GASE和INSE转换后金属辣椒剂层的拉曼光谱法
Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers
论文作者
论文摘要
III-VI过渡后金属硫化剂（INSE和GASE）是一类新的分层半导体，它们具有较大的大小和带状类型的变化，其带有层数（n）的函数。在这里，我们使用拉曼光谱法研究了从六角硼中封装在六边形硼中的Inse和Gase的去角质层。我们介绍了每个原子层内的内层振动以及层间剪切和层呼吸模式的N依赖性。线性链模型可用于描述峰位置作为N的函数的演变，与第一原理计算一致。
III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak positions as a function of N, consistent with first principles calculations.
