论文标题
Si（111）底物上垂直INP纳米线的密度控制生长
Density-controlled growth of vertical InP nanowires on Si(111) substrates
论文作者
论文摘要
据报道，使用分子束外观的蒸气 - 液固醇方法，通过（111）硅底物上的金催化INP纳米线（NWS）实现密度控制的程序。除了控制NW成核的条件外，我们还基于控制Au-In催化剂液滴的数量和大小而开发了一种有效且无面膜的方法。我们表明，通过磷的BEP和生长温度，可以通过适当的选择IN/AU催化剂束等效压力（BEP）比率调节NW密度在18μm-2至<0.1μM-2的范围内调节。相同的控制程度转移到INAS/INP量子点 - 纳米线上，利用超低密度通过微型发光的超低密度进行研究，在电信带中发出的单个量子点 - 纳米线的光学特性单硅质在硅上生长。低温温度下的光谱谱图成功地证实了我们方法在生长样品上激发单个INAS量子点的相关性，这为基于在硅上集成的单个量子点 - 纳米线设备开辟了大规模应用的路径。
A procedure to achieve the density-controlled growth of gold-catalyzed InP nanowires (NWs) on (111) silicon substrates using the vapor-liquid-solid method by molecular beam epitaxy is reported. We develop an effective and mask-free method based on controlling the number and the size of the Au-In catalyst droplets in addition to the conditions for the NW nucleation. We show that the NW density can be tuned with values in the range of 18 μm-2 to < 0.1 μm-2 by the suitable choice of the In/Au catalyst beam equivalent pressure (BEP) ratio, by the phosphorous BEP and the growth temperature. The same degree of control is transferred to InAs/InP quantum dot-nanowires, taking advantage of the ultra-low density to study by micro-photoluminescence the optical properties of a single quantum dot-nanowires emitting in the telecom band monolithically grown on silicon. Optical spectroscopy at cryogenic temperature successfully confirmed the relevance of our method to excite single InAs quantum dots on the as-grown sample, which opens the path for large-scale applications based on single quantum dot-nanowire devices integrated on silicon.
