论文标题
成像单层MOS2中的山谷和轨道大厅效应
Imaging the valley and orbital Hall effect in monolayer MoS2
论文作者
论文摘要
材料电子结构的拓扑特性在其浆果曲率中编码，该量与横向电导率密切相关。在过渡金属二分法中，反转对称性损坏，非零浆果曲率会导致山谷大厅的效应。在本文中，我们确定了这些材料中浆果曲率的先前未知的后果：电场引起的电子电荷密度方向的变化。我们使用第一原理计算来表明电场诱导的电荷密度变化或MOS $ _2 $中状态的局部密度的变化可用于测量其能量依赖性山谷和轨道霍尔电导率。
The topological properties of a material's electronic structure are encoded in its Berry curvature, a quantity which is intimately related to the transverse electrical conductivity. In transition metal dichalcogenides with broken inversion symmetry, the nonzero Berry curvature results in a valley Hall effect. In this paper we identify a previously unrecognized consequence of Berry curvature in these materials: an electric field-induced change in the electrons' charge density orientation. We use first principles calculations to show that measurements of the electric field-induced change in the charge density or local density of states in MoS$_2$ can be used to measure its energy-dependent valley and orbital Hall conductivity.
