论文标题
SIC在（100）钻石上的外延生长
Epitaxial growth of SiC on (100) Diamond
论文作者
论文摘要
我们证明了钻石上硅（SIC）的局部连贯的异质增长，结果与当前对异质界的理解相反，因为晶格不匹配超过$ 20 \％$。高分辨率透射电子显微镜（HRTEM）证实了界面附近的质量和原子结构。在分子动力学模拟的指导下，为界面提出了一个理论模型，其中大晶格应变通过二维平面中的点脱位缓解，而没有在三个维度中形成扩展的缺陷。实现技术重要材料（例如钻石）等技术重要材料的异质结构的可能性为高功率电子的热管理提供了有希望的途径。在基本层面上，这项研究重新定义了我们对晶格不匹配的异质结构形成的理解。
We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch exceeds $20\%$. High-resolution transmission electron microscopy (HRTEM) confirms the quality and atomic structure near the interface. Guided by molecular dynamics simulations, a theoretical model is proposed for the interface wherein the large lattice strain is alleviated via point dislocations in a two-dimensional plane without forming extended defects in three dimensions. The possibility of realising heterojunctions of technologically important materials such as SiC with diamond offers promising pathways for thermal management of high power electronics. At a fundamental level, the study redefines our understanding of heterostructure formation with large lattice mismatch.
