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Local strain engineering is an exciting approach to tune the optoelectronic properties of materials. Two dimensional (2D) materials such as 2D transition metal dichalcogenides (TMDs) are particularly well suited for this purpose because they have high flexibility and they can withstand high deformations before rupture. Local strain engineering in 2D TMDs is achieved via strained wrinkles. Wrinkles on thick layers of TMDs are reported to show interesting photoluminescence enhancement due to bandgap modulation and funneling effect. However, the wrinkles in ultrathin TMDs have not been investigated because they can easily fall down to form folds in these ultrathin layers of TMDCs. Here, we have achieved both wrinkles and folds simultaneously in 1-3L WS2 using a new fabrication technique. A layer dependent reduction in surface potential is found for both folded layers and perfect pack layers due to the dominant interlayer screening effect. Strain dependent modulation in semi conductive junction properties is observed for strain induced wrinkles through current scanning. Thermo-ionic modelling suggests that the strained (1.6%) wrinkles can lower the Schottky barrier height (SBH) by 20%. Upon illumination, SBH reduces significantly due to photo-generated carriers. Our results present an important advance towards controlling the optoelectronic properties of atomically thin WS2 via strain engineering, with applications in optoelectronics, quantum optics and nanophotonics device fabrication.