论文标题
由Movpe生长的简单NP-N隧道连接LED的限制
Limitation of simple np-n tunnel junction based LEDs grown by MOVPE
论文作者
论文摘要
我们表明的证据表明，金属有机蒸气相生长的gan中的隧道连接（TJ）由陷阱辅助（Poole-frenkel）隧道主导。这源于对TJ的仔细优化掺杂的观察。尤其是p $^{++} $和n $^{++} $层远非理想。 N $^{++} $层诱导3D生长，可以通过二级离子质谱（SIMS）中的氧信号上升来看出。此外，SIMS观察到的Mg分离表明耗尽超过10 nm的区域。尽管如此，我们仍可以实现基于TJ的LED，低罚电压为1.1 V，并且在20 MA的情况下，在20 MA处的特定差分电阻约为10 $^{ - 2} $ $ω$ .cm $ .cm $ .cm $^2 $。
We show evidence that tunnel junctions (TJs) in GaN grown by metal-organic vapor phase epitaxy are dominated by trap-assisted (Poole-Frenkel) tunneling. This stems from observations of the careful optimized doping for the TJs. Especially the p$^{++}$ and the n$^{++}$ layers are far from ideal. The n$^{++}$ layer induces 3D growth, which can be seen by a rising oxygen signal in Secondary Ions Mass Spectroscopy (SIMS). Furthermore, Mg segregation observed by SIMS indicates a depletion region of more than 10 nm. Still, we could realize TJ based LEDs with a low penalty voltage of 1.1 V and a specific differential resistance of about 10$^{-2}$ $Ω$.cm$^2$ at 20 mA without using an InGaN interlayer.
