论文标题
attosent-fast Internal Fhosission
Attosecond-fast internal photoemission
论文作者
论文摘要
光电效应具有称为内部光发射的光电学相关的姊妹过程。在这里，电子从金属进入半导体。虽然光电效应发生在不到100秒的时间内，但迄今为止尚未测量attosent Time量表以进行内部光发射。基于新方法电荷传输时间测量通过激光脉冲持续时间依赖性饱和通量确定，Chameleon，我们表明，原子上薄的半金属石墨烯偶联与大块碳化硅耦合，形成Schottky交界处，允许电荷转移时间（300 $ \ pm pp pm $ $ \ $ $ $ \ $ 200）。这些结果由简单的量子机械模型模拟支持。由于电荷传输速率获得的截止带宽为3.3 PHz，该半轴向导向器界面代表了第一个功能性固态接口，提供了未来轻波信号处理所需的速度和设计空间。
The photoelectric effect has a sister process relevant in optoelectronics called internal photoemission. Here an electron is photoemitted from a metal into a semiconductor. While the photoelectric effect takes place within less than 100 attoseconds, the attosecond time scale has so far not been measured for internal photoemission. Based on the new method CHArge transfer time MEasurement via Laser pulse duration-dependent saturation fluEnce determinatiON, CHAMELEON, we show that the atomically thin semi-metal graphene coupled to bulk silicon carbide, forming a Schottky junction, allows charge transfer times as fast as (300 $\pm$ 200) attoseconds. These results are supported by a simple quantum mechanical model simulation. With the obtained cut-off bandwidth of 3.3 PHz for the charge transfer rate, this semimetal-semiconductor interface represents the first functional solid-state interface offering the speed and design space required for future light-wave signal processing.
