论文标题
相关的双层石墨烯相关的绝缘阶段在相称的填充分数：Hartree-fock研究
Correlated insulating phases of twisted bilayer graphene at commensurate filling fractions: a Hartree-Fock study
论文作者
论文摘要
由扭曲的双层石墨烯中最近观察到的绝缘状态的动机，我们研究了相应的填充分数时扭曲的双层石墨烯相关的绝缘阶段的性质。我们使用连续模型并将库仑相互作用投射到平坦的频段上，以使用Hartree-fock近似来研究基础状态。在没有六边形硝酸硼基底物的情况下，基态是电荷中立性的间隔连贯状态（填充$ν$ = 0，或每个Moiré每个Moiré牢房中的四个电子），在$ν$ = -1/4和-1/4和-1/2（分别为$ C_2 $ c_2 $ = $ c_2 $ = $ = $ = $ = $ c_2 -3/4（每个细胞一个电子）。六角硼氮化物底物将所有$ν$驱动到$ C_2 \ Mathcal {t} $对称性破碎状态中。我们的结果为进一步研究扭曲的双层石墨烯中丰富相关的物理学提供了良好的参考点。
Motivated by the recently observed insulating states in twisted bilayer graphene, we study the nature of the correlated insulating phases of the twisted bilayer graphene at commensurate filling fractions. We use the continuum model and project the Coulomb interaction onto the flat bands to study the ground states by using a Hartree-Fock approximation. In the absence of the hexagonal boron nitride substrate, the ground states are the intervalley coherence states at charge neutrality (filling $ν$ = 0, or four electrons per moiré cell) and at $ν$ = -1/4 and -1/2 (three and two electrons per cell, respectively) and the $C_2\mathcal{T}$ symmetry-broken state at $ν$= -3/4 (one electron per cell). The hexagonal boron nitride substrate drives the ground states at all $ν$ into $C_2\mathcal{T}$ symmetry broken-states. Our results provide good reference points for further study of the rich correlated physics in the twisted bilayer graphene.
